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    13-я Международная выставка электронных компонентов и комплектующих для электронной промышленности





    Выставка Передовые Технологии Автоматизации




    Главная страница > Обзоры по типам > Транзисторы > Принципы работы мощных MOSFET и IGBT транзисторов
    Пересюхтюмя


    13-я Международная выставка электронных компонентов и комплектующих для электронной промышленности





    Выставка Передовые Технологии Автоматизации


    Литература

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    3. Majumdar, G.; Hatae, S.; Fukunaga, M.; Oota, T.; Mori, S.; Thal, E.: "600 V HVIC Incorporated Application. Specific IPMs for Low Power Motor Control", PCIM 1995, Nьrnberg; Proc. Power Electronics, pp. 155-161
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    6. Szeponik, S., Berger, G., Petzoldt, J., Gens, W.: "Correction of the Current-Depending Voltage Fault in PWM-Inverters with Higher Pulse Frequency by a Control-Automat". PCIM 1995, Nьrnberg, Proc. Power Electronics, pp. 289-295
    7. Soule, C.: "Thermal Management of IGBT Power Modules“. PCIM 1995, Nьrnberg, Proc. Power Electronics, pp.297-312
    8. Lindemann, A.: „Investigations on Electromagnetic Compatibility of Power Semiconductor Modules Integrated in a Converter“, PCIM 1995, Nьrnberg, Proc. Power Electronics, pp.251-262
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    14. Coquery, G.; Lallemand, R.; Wagner, D.; Gibard, P.: "Reliability of the 400 A IGBT Modules for Traction Converters. Contribution on the Power Thermal Fatigue Influence on Life Expancy“. EPE 1995, Sevilla, Proc. Vol. 1, pp. 60-66
    15. Kraus, R.; Reddig, M.; Hoffmann, K.: „The Short-Circuit Behaviour of IGBTs Based on Different Technologies“, EPE 1995, Sevilla, Proc. Vol. 1, pp. 157-161
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    33. Sunkavalli, R., Baliga, B.J.: "Integral Diodes in Lateral DI Power Devices" ISPSD 1995, Yokohama, Proc. pp. 385-390
    34. Richard, K.W., u.a.: "The Bidirectional Power NMOS-A New Concept in Battery Disconnect Switching" ISPSD 1995, Yokohama, Proc. pp. 480-485
    35. Tornblad, O., u.a.: "Simulations and Measurements of Emitter Properties in 5 kV Si PIN Diodes" ISPSD 1995, Yokohama, Proc. pp. 380-384
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    39. Bernet, S., Petzoldt, J.: "AC-Link Converters with MCTs and Reverse Blocking NPT-IGBTs" PESC 1995, Atlanta, USA, Proc. Vol. II, pp. 1258-1264
    40. Klotz, F., Petzoldt, J.: "Modell zur Berechnung leitungsgebundener elektromagnetischer Stцrungen durch leistungselektronische Schalter", 8.Symposium Maritime Elektronik, Universitдt Rostock, 1995, Band Maritime Energie- und Steuerungstechnik, pp. 89-93
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    43. Reimann, T.: "Verhalten abschaltbarer Leistungshalbleiterbauelemente im ZVS-Mode" Dt. Dissertation, TU Ilmenau, 1994, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0538-7
    44. Bernet, S.: "Leistungshalbleiter als Nullstromschalter in Stromrichtern mit weichen Schaltvorgдngen" Dt. Dissertation, TU Ilmenau, 1995, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0762-2
    45. Bruckmann, M.; Sigg, J.; Tьrkes, P.: „Reihenschaltung von IGBT’s in Experiment und Simulation“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 6
    46. Stockmeier, T.; u.a.: „Zuverlдssiges Hochleistungs IGBT Modul fьr Traktionsanwendungen“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 18
    47. Hofer, P.; Hugel, J.: „Ansteuerseitige di/dt- und du/dt-Regelung fьr IGBT-Umrichter“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 19
    48. Konrad, S.; Zverev, I.: „Treiber- und Schutzkonzepte fьr spannungsgesteuerte Leistungshalbleiter“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 20
    49. Reimann, T.; Bernet, S.: "Beanspruchung und Verhalten von IGBTs beim weichen Schalten als Nullstromund Nullspannungsschalter", 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 21
    50. Lutz, J.; Nagengast, P.: „Die Controlled Axial Lifetime (CAL)-Diode unter sehr hoher dynamischer Belastung“, 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 26
    51. Reinmuth, K.; Lorenz, L.: „Protected IGBTs and Modules“, PCIM Europe, Jan./Feb. 1995, pp. 20-23
    52. Emerald, P.; Greenland, P.: „Power Multi-Chip Modules“, PCIM Europe, Sep./Oct. 1995, pp. 242-246
    53. Passerini, B.: „Heat Exchangers in Power Modules“, PCIM Europe, Sep./Oct. 1995, pp. 248-252
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    55. Iida, T; u.a. „Trench IGBT for Battery-Operated Vehicles“, PCIM Europe, Nov./Dec. 1995, pp. 318-319
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    61. Gerster, Ch.; Hofer, P.; Karrer, N.: “Gate-control Strategies for Snubberless Operation of Series Connected IGBTs”, PESC’96, Baveno, Proc. Vol. II, pp. 1739-1742
    62. Merienne, F.; Roudet, J.; Schanen, J.L.: „Switching Disturbance due to Source Inductance for a Power MOSFET: Analysis and Solutions“, PESC’96, Baveno, Proc. Vol. I, pp. 1743-1747
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    68. Julian, A.L.; Lipo, T.A.: „Elimination of Common Mode Voltage in Three Phase Sinussiodal Power Converters“, PESC’96, Baveno, Proc. Vol. II, pp. 1768-1972
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    81. Amimi, A.; Bouchakour, R.; Maurel, T.: „Modeling of Self-Heating and Degradation Effects on the Electrical Behaviour of the IGBT“, PEMC 1996, Budapest, Proc. Vol. I, pp. 146-150
    82. Spanik, P.; Dobrucky, B.; Hukel, M.; Paska, R.: „A Simulation of Inverse Mode Operation of Power MOSEFET“, PEMC 1996, Budapest, Proc. Vol. I, pp. 156-160
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    96. Gцttert, J.; u.a.: „Insulation Voltage Test and Partial Discharge Test of 3,3 kV IGBT-Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 119-122
    97. Duong, S.; u.a.: „Investigation on Fuses against IGBT Case Explosion“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 123-132
    98. Enck, R.C.: „Aluminium Nitride Solutions in Power Packages and Power Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 133-150
    99. Premkumar, M.K.: „Al/SiC for Power Electronics Packaging“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 151-161
    100. Fukuda, M.; u.a.: „A Comparison between Thermal Stresses of an Insulated Metal Substrate and an Aluminia DBC“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 177-184
    101. Ishii, K.; u.a.: „A New High Power, High Voltage IGBT“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 185-190
    102. Tanaka, A.; u.a.: „3300 V High Power IGBT Modules with High Reliability for Traction Applications“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 191-199
    103. Hierholzer, M.; u.a.: „Improved Characteristics of 3,3 kV IGBT Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 201-204
    104. Hiyoshi, M.; Skinner, A.; u.a.: „3,3 kV and 2,5 kV Press Pack IGBT Switching Performance and Mechanical Reliability“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 205-215
    105. Guttowski, S.; Jцrgensen, H.; Heumann, K.: „Influence of the Modulation Method on Conducted Line Emissions of Voltage-Fed Pulsed Inverters“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 243-249
    106. Lutz, J.: „The Freewheeling Diode - No Longer the Weak Component“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 259-265
    107. Mauder, A.; Scholz, W.: „Investigation of the Static and Dynamic Current Distribution in Paralleled IGBT Modules“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 275-284
    108. Nickel, Ch.; Ho, P.; u.a.: „An SO-16 Isolated IGBT Gate Driver with Integrated Desaturation Protection and Fault Feedback“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 285-292
    109. Bober, G.; Arlt, B.; Lokuta, F.: „Ultrafast IGBTs Beats MOS in Switching Applications“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 319-325
    110. Eckel, H.G.: „Series Connection of IGBTs in Zero Voltage Switching Inverters“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 327-333
    111. Krьmmer, R., Konrad, S.; Lorenz, L.: „Investigation and Comparison of the Parallel Connection of Discrete PT- and NPT-IGBTs“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 335-343
    112. Schimanek, E.; Mackert, G.: „Semikron SKiiPPACK with New Driver Principle „OCP“ - The Next Step in Intelligent Power Electronics (OCP - Over Current Protection)“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 373-384
    113. Ferber, G.; u.a.: „Economy Improvement in Inverter-Converter Module Design“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 455-463
    114. Bhotto, G.; Carpita, M.; u.a.: „Series Connected Soft Switched IGBTs for High Power, High Voltage Drives Applications: Experimental Results“, PESC 1997, St. Louis, Proc. Vol. I, pp. 3-7
    115. Githiari, A.N.; u.a.: „A Comparison of IGBT Models for Use in Circuit Design“ PESC 1997, St. Louis, Proc. Vol. II, pp. 1554-1560
    116. Strollo, A.G.M.: „A new IGBT Circuit Model for SPICE Simulation“ PESC 1997, St. Louis, Proc. Vol. I, pp. 133-137
    117. Beukes, H.J.; u.a.: „Busbar Design Considerations for High Power IGBT Converters“ PESC 1997, St. Louis, Proc. Vol. II, pp. 847-853
    118. Palmer, P.R.: „Some Scaling Issues in the Active Voltage Control of IGBT Modules for High Power Applications“, PESC 1997, St. Louis, Proc. Vol. II, pp. 854-860
    119. Zverev, I.; Konrad, S.; Vцlker, H.; Petzoldt, J.; Klotz, F.: „Influence of the Gate Drive Techniques on the EMI-Behaviour of a Power Converter", PESC'97, St. Louis, Proc. Vol.II, pp. 1522-1528
    120. Guttowski, S.; Heumann, K.; Jцrgensen, H.: „The Possibilities of Reducing Conducte Line Emissions by Modifying the Basic Parameters of Voltage-Fed Pulsed Inverters“ PESC'97, St. Louis, Proc. Vol.II, pp. 1535-1540
    121. Julian, A.L. Oriti, G.; Lipo, T.A.: „A New Space Vector Modulation Strategy for Common Mode Voltage Reduction“, PESC'97, St. Louis, Proc. Vol.II, pp. 1541-1546
    122. Ogasawara, S.; Ayano, H.; Akagi, H.: „An Actice Circuit for Cancellation of Common-Mode Voltage Generated by a PWM Inverter“, PESC'97, St. Louis, Proc. Vol.II, pp. 1547-1553
    123. Matsuda, H.; Hiyoshi, M.; Kawamura, N.: „Pressure Contact Assembly Technology of High Power Devices“, ISPSD 1997, Weimar, Proc. pp. 17-24
    124. Palmour, J.W.; Singh, R.; u.a.: „Silicon Carbide for Power Devices“ ISPSD 1997, Weimar, Proc. pp. 25-32
    125. Terashima, T.; Shimizu, K.; Hine, S.: „A New Level-Shifting Technique by Devided RESURF Structure“ ISPSD 1997, Weimar, Proc. pp. 57-60
    126. Igarashi, S.; u.a.: „An Active Control Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System“, ISPSD 1997, Weimar, Proc. pp. 69-72
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