Дискретные N-канальные силовые полевые МОП транзисторы технологии HEXFET® на напряжение 75-80 В
Типономинал |
Корпус |
Схема |
Polarity |
VBRdss (V) |
RDS(on) 2.7V (mohms) |
RDS(on) 4.5V (mohms) |
RDS(on) 10V (mohms) |
ID @ 25C (A) |
Id @ 100C (A) |
QG Typ |
QGD Typ |
Rth(JC) |
Мощность рассеяния (W) |
IRF1312 |
TO-220AB |
DISCRETE |
N |
80 |
|
|
10.0 |
95 |
67 |
93.0 |
34.0 |
0.73 |
210 |
IRF1312L |
TO-262 |
DISCRETE |
N |
80 |
|
|
10.0 |
95 |
67 |
93.0 |
34.0 |
0.73 |
210 |
IRF1312S |
D2-Pak |
DISCRETE |
N |
80 |
|
|
10.0 |
95 |
67 |
93.0 |
34.0 |
0.73 |
210 |
IRF1407 |
TO-220AB |
DISCRETE |
N |
75 |
|
|
7.8 |
130 |
70 |
160.0 |
54.0 |
0.45 |
330 |
IRF1407L |
TO-262 |
DISCRETE |
N |
75 |
|
|
7.8 |
100 |
70 |
160.0 |
54.0 |
0.75 |
200 |
IRF1407S |
D2-Pak |
DISCRETE |
N |
75 |
|
|
7.8 |
100 |
70 |
160.0 |
54.0 |
0.75 |
200 |
IRF1607 |
TO-220AB |
DISCRETE |
N |
75 |
|
|
7.5 |
142 |
100 |
210.0 |
73.0 |
0.40 |
380 |
IRF2807 |
TO-220AB |
DISCRETE |
N |
75 |
|
|
13.0 |
82 |
58 |
106.7 |
36.7 |
0.75 |
200 |
IRF2807L |
TO-262 |
DISCRETE |
N |
75 |
|
|
13.0 |
82 |
58 |
106.7 |
36.7 |
0.75 |
200 |
IRF2807S |
D2-Pak |
DISCRETE |
N |
75 |
|
|
13.0 |
82 |
58 |
106.7 |
36.7 |
0.75 |
200 |
IRF2807Z |
TO-220AB |
DISCRETE |
N |
75 |
|
|
9.4 |
89 |
63 |
71.0 |
28.0 |
0.90 |
170 |
IRF2807ZL |
TO-262 |
DISCRETE |
N |
75 |
|
|
9.4 |
89 |
63 |
71.0 |
28.0 |
0.90 |
170 |
IRF2807ZS |
D2-Pak |
DISCRETE |
N |
75 |
|
|
9.4 |
89 |
63 |
71.0 |
28.0 |
0.90 |
170 |
IRF3007 |
TO-220AB |
DISCRETE |
N |
75 |
|
|
12.6 |
80 |
56 |
89.0 |
30.0 |
0.74 |
200 |
IRF3007L |
TO-262 |
DISCRETE |
N |
75 |
|
|
12.6 |
62 |
44 |
89.0 |
30.0 |
1.25 |
120 |
IRF3007S |
D2-Pak |
DISCRETE |
N |
75 |
|
|
12.6 |
62 |
44 |
89.0 |
30.0 |
1.25 |
120 |
IRF3808 |
TO-220AB |
DISCRETE |
N |
75 |
|
|
7.0 |
140 |
97 |
150.0 |
50.0 |
0.45 |
330 |
IRF3808L |
TO-262 |
DISCRETE |
N |
75 |
|
|
7.0 |
105 |
|
150.0 |
50.0 |
0.75 |
200 |
IRF3808S |
D2-Pak |
DISCRETE |
N |
75 |
|
|
7.0 |
105 |
75 |
150.0 |
50.0 |
0.75 |
200 |
IRF7488 |
SO-8 |
DISCRETE |
N |
80 |
|
|
29.0 |
6.3 |
1.6 |
38.0 |
12.0 |
50 |
2.5 |
Типономинал |
Корпус |
Схема |
Polarity |
VBRdss (V) |
RDS(on) 2.7V (mohms) |
RDS(on) 4.5V (mohms) |
RDS(on) 10V (mohms) |
ID @ 25C (A) |
Id @ 100C (A) |
QG Typ |
QGD Typ |
Rth(JC) |
Мощность рассеяния (W) |
IRF7493 |
SO-8 |
DISCRETE |
N |
80 |
|
|
15.0 |
9.2 |
5.8 |
31.0 |
12.0 |
50 |
2.5 |
IRFP2907 |
TO-247AC |
DISCRETE |
N |
75 |
|
|
4.5 |
177 |
125 |
410.0 |
140.0 |
0.45 |
330 |
IRFR2407 |
D-Pak |
DISCRETE |
N |
75 |
|
|
26.0 |
42 |
29 |
74.0 |
22.0 |
1.4 |
110 |
IRFR3518 |
D-Pak |
DISCRETE |
N |
80 |
|
|
29.0 |
38 |
27 |
37.0 |
12.0 |
1.4 |
110 |
IRFU2407 |
I-Pak |
DISCRETE |
N |
75 |
|
|
26.0 |
42 |
29 |
74.0 |
22.0 |
1.4 |
110 |
IRFU3518 |
I-Pak |
DISCRETE |
N |
80 |
|
|
29.0 |
38 |
27 |
37.0 |
12.0 |
1.4 |
110 |
IRLR2908 |
D-Pak |
DISCRETE |
N |
80 |
|
30.0 |
28.0 |
39 |
28 |
22.0 |
11.0 |
1.3 |
120 |
IRLU2908 |
I-Pak |
DISCRETE |
N |
80 |
|
30.0 |
28.0 |
39 |
28 |
22.0 |
11.0 |
1.3 |
120 |
- Polarity - полярность
- V(BR)DSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) (Static Drain-to-Source On-Resistance) - сопротивление по постоянному току во включенном состоянии между стоком и истоком
- ID (Continuous Drain Current) - продолжительный ток стока
- QG Typ (Total Gate Charge) - типичный совокупный заряд затвора
- QGD Typ (Gate-to-Drain ("Miller") Charge) - типичный заряд затвор-сток (заряд "Миллера")
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
|