Дискретные P-канальные силовые полевые МОП транзисторы технологии HEXFET® на напряжение -200 В
| Типономинал |
Корпус |
Схема |
Polarity |
VBRdss (V) |
RDS(on) 10V (mohms) |
ID @ 25C (A) |
Id @ 100C (A) |
QG Typ |
QGD Typ |
Rth(JC) |
Мощность рассеяния (W) |
 IRF9610S |
D2-Pak |
DISCRETE |
P |
-200 |
3000.0 |
-1.8 |
-1 |
7.3 |
2.7 |
6.4 |
20 |
| IRF9620S |
D2-Pak |
DISCRETE |
P |
-200 |
1500.0 |
-2.5 |
-2 |
14.7 |
6.7 |
3.1 |
40 |
| IRF9630 |
TO-220AB |
DISCRETE |
P |
-200 |
800.0 |
-6.5 |
-4 |
19.3 |
10.0 |
1.7 |
74 |
| IRF9630S |
D2-Pak |
DISCRETE |
P |
-200 |
800.0 |
-6.5 |
-4 |
19.3 |
10.0 |
1.7 |
74 |
| IRF9640 |
TO-220AB |
DISCRETE |
P |
-200 |
500.0 |
-11 |
-6.8 |
29.3 |
18.0 |
1.00 |
125 |
| IRF9640S |
D2-Pak |
DISCRETE |
P |
-200 |
500.0 |
-11 |
-6.8 |
29.3 |
18.0 |
1.00 |
125 |
| IRFD9210 |
HEXDIP |
DISCRETE |
P |
-200 |
3000.0 |
-.4 |
-0.25 |
5.9 |
2.6 |
120 |
1.3 |
| IRFD9220 |
HEXDIP |
DISCRETE |
P |
-200 |
1500.0 |
-.56 |
-0.36 |
10.0 |
5.6 |
120 |
1.3 |
| IRFI9610G |
TO-220 FullPak (Iso) |
DISCRETE |
P |
-200 |
3000.0 |
-2 |
-1.3 |
8.7 |
4.9 |
4.6 |
27 |
| IRFI9620G |
TO-220 FullPak (Iso) |
DISCRETE |
P |
-200 |
1500.0 |
-3.0 |
-1.9 |
10.0 |
5.6 |
4.1 |
30 |
| IRFI9630G |
TO-220 FullPak (Iso) |
DISCRETE |
P |
-200 |
800.0 |
-4.3 |
-2.7 |
19.3 |
10.0 |
3.6 |
40 |
| IRFI9640G |
TO-220 FullPak (Iso) |
DISCRETE |
P |
-200 |
500.0 |
-6.1 |
-3.9 |
29.3 |
18.0 |
3.1 |
40 |
| IRFP9240 |
TO-247AC |
DISCRETE |
P |
-200 |
500.0 |
-12 |
-7.5 |
29.3 |
18.0 |
0.83 |
150 |
| IRFR9210 |
D-Pak |
DISCRETE |
P |
-200 |
3000.0 |
-1.9 |
-1.2 |
5.9 |
2.6 |
5 |
25 |
| IRFR9220 |
D-Pak |
DISCRETE |
P |
-200 |
1500.0 |
-3.6 |
-2.3 |
13.3 |
7.3 |
3 |
42 |
| IRFU9210 |
I-Pak |
DISCRETE |
P |
-200 |
3000.0 |
-1.9 |
-1.2 |
5.9 |
2.6 |
5.0 |
25 |
| IRFU9220 |
I-Pak |
DISCRETE |
P |
-200 |
1500.0 |
-3.6 |
-2.3 |
13.3 |
7.3 |
3.0 |
42 |
- Polarity - полярность
- V(BR)DSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) (Static Drain-to-Source On-Resistance) - сопротивление по постоянному току во включенном состоянии между стоком и истоком
- ID (Continuous Drain Current) - продолжительный ток стока
- QG Typ (Total Gate Charge) - типичный совокупный заряд затвора
- QGD Typ (Gate-to-Drain ("Miller") Charge) - типичный заряд затвор-сток (заряд "Миллера")
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
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