Двойные N-канальные силовые полевые МОП транзисторы технологии HEXFET®
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
BVDSS |
Rds(on) /N-channel (mOhms) max |
@ Vgs |
ID @ 25C /N-channel (A) |
Id @ 70C N-Channel |
Rth(JC) |
Мощность рассеяния (W) |
 IRF5852 |
TSOP-6 |
DUAL N |
N |
3V DRIVE |
20 |
90.0 |
4.5 |
2.7 |
2.2 |
130 |
0.96 |
| IRF6156 |
6-Lead FlipFET |
DUAL N |
N-BIDIRECTIONAL |
2.5V DRIVE |
20 |
40.0 |
4.5 |
6.5 |
5.2 |
50 |
2.5 |
| IRF7101 |
SO-8 |
DUAL N |
N |
LOGIC |
20 |
100.0 |
4.5 |
3.5 |
2.3 |
62.5 |
2.0 |
| IRF7103 |
SO-8 |
DUAL N |
N |
LOGIC |
50 |
130.0 |
4.5 |
3.0 |
2.3 |
62.5 |
2.0 |
| IRF7103Q |
SO-8 |
DUAL N |
N |
LOGIC |
50 |
1500.0 |
4.5 |
3.0 |
2.5 |
50 |
2.4 |
| IRF7301 |
SO-8 |
DUAL N |
N |
3V DRIVE |
20 |
50.0 |
4.5 |
5.2 |
4.1 |
62.5 |
2.0 |
| IRF7303 |
SO-8 |
DUAL N |
N |
LOGIC |
30 |
80.0 |
4.5 |
4.9 |
3.9 |
62.5 |
2.0 |
| IRF7311 |
SO-8 |
DUAL N |
N |
LOGIC |
20 |
29.0 |
10 |
6.6 |
5.3 |
62.5 |
2.0 |
| IRF7313 |
SO-8 |
DUAL N |
N |
LOGIC |
30 |
29.0 |
10 |
6.5 |
5.2 |
62.5 |
2.0 |
| IRF7331 |
SO-8 |
DUAL N |
N |
LOGIC |
20 |
30.0 |
4.5 |
7.0 |
|
62.5 |
2.0 |
| IRF7341 |
SO-8 |
DUAL N |
N |
LOGIC |
55 |
43.0 |
10 |
4.7 |
3.8 |
62.5 |
2.0 |
| IRF7341Q |
SO-8 |
DUAL N |
N |
LOGIC |
55 |
65.0 |
4.5 |
5.1 |
4.2 |
62.5 |
2.4 |
| IRF7380 |
SO-8 |
DUAL N |
N |
STANDARD |
80 |
73.0 |
10 |
3.6 |
2.8 |
50 |
2.0 |
| IRF7501 |
Micro 8 |
DUAL N |
N |
3V DRIVE |
20 |
135.0 |
2.7 |
2.4 |
1.9 |
100 |
1.2 |
| IRF7503 |
Micro 8 |
DUAL N |
N |
LOGIC |
30 |
135.0 |
4.5 |
2.4 |
1.9 |
100 |
1.25 |
| IRF7530 |
Micro 8 |
DUAL N |
N |
3V DRIVE |
20 |
30.0 |
4.5 |
5.4 |
4.3 |
100 |
1.3 |
| IRF7752 |
TSSOP-8 |
DUAL N |
N |
LOGIC |
30 |
30.0 |
10 |
4.6 |
3.7 |
125 |
1.0 |
| IRF7757 |
TSSOP-8 |
DUAL N |
N |
3V DRIVE |
20 |
35.0 |
4.5 |
4.8 |
3.9 |
105 |
1.2 |
| IRF7910 |
SO-8 |
DUAL N |
N |
LOGIC |
12 |
15.0 |
4.5 |
10 |
7.9 |
62.5 |
2.0 |
| IRF8910 |
SO-8 |
DUAL N |
N |
4.5V LOGIC |
20 |
18.3 |
4.5 |
10 |
8.3 |
62.5 |
2.0 |
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
BVDSS |
Rds(on) /N-channel (mOhms) max |
@ Vgs |
ID @ 25C /N-channel (A) |
Id @ 70C N-Channel |
Rth(JC) |
Мощность рассеяния (W) |
| IRF8915 |
SO-8 |
DUAL N |
N |
4.5V LOGIC |
20 |
27.0 |
4.5 |
8.9 |
7.1 |
62.5 |
2.0 |
| IRF9910 |
SO-8 |
DUAL N |
N |
4.5V LOGIC |
20 |
18.3 |
4.5 |
10 |
8.3 |
62.5 |
2.0 |
| IRF9956 |
SO-8 |
DUAL N |
N |
LOGIC |
30 |
100.0 |
10 |
3.5 |
2.8 |
62.5 |
2.0 |
- Polarity - полярность
- Gate Drive - разновидность схемы управления затвором
- BVDSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) max (Static Drain-to-Source On-Resistance) -максимальное сопротивление по постоянному току во включенном состоянии между стоком и истоком
- @Vgs (Gate-to-Source Voltage) - нормированное напряжение затвор-исток, при котором происходит открытие канала транзистора
- ID (Continuous Drain Current) - продолжительный ток стока
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
|
