Двойные P-канальные силовые полевые МОП транзисторы технологии HEXFET®
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
BVDSS |
Rds(on) /P-channel (mOhms) max |
@ Vgs |
ID @ 25C /P-channel (A) |
Id @ 70C P-Channel |
Rth(JC) |
Мощность рассеяния (W) |
 IRF5810 |
TSOP-6 |
DUAL P |
P |
2.5V DRIVE |
-20 |
135.0 |
-4.5 |
|
-2.3 |
130 |
0.96 |
| IRF5850 |
TSOP-6 |
DUAL P |
P |
3V DRIVE |
-20 |
135.0 |
-4.5 |
-2.2 |
-1.8 |
130 |
0.96 |
| IRF7104 |
SO-8 |
DUAL P |
P |
LOGIC |
-20 |
250.0 |
-4.5 |
-2.3 |
-1.8 |
62.5 |
2.0 |
| IRF7304 |
SO-8 |
DUAL P |
P |
3V DRIVE |
-20 |
90.0 |
-4.5 |
-4.3 |
-3.4 |
62.5 |
2.0 |
| IRF7306 |
SO-8 |
DUAL P |
P |
LOGIC |
-30 |
100.0 |
-4.5 |
-3.6 |
-2.9 |
62.5 |
2.0 |
| IRF7314 |
SO-8 |
DUAL P |
P |
LOGIC |
-20 |
58.0 |
-10 |
-5.3 |
-4.3 |
62.5 |
2.0 |
| IRF7314Q |
SO-8 |
DUAL P |
P |
3V DRIVE |
-20 |
58.0 |
-4.5 |
-5.2 |
-4.3 |
62.5 |
2.4 |
| IRF7316 |
SO-8 |
DUAL P |
P |
LOGIC |
-30 |
58.0 |
-10 |
-4.9 |
-3.9 |
62.5 |
2.0 |
| IRF7324 |
SO-8 |
DUAL P |
P |
4.5V LOGIC |
-20 |
180.0 |
-4.5 |
-9.0 |
-7.1 |
62.5 |
2.0 |
| IRF7325 |
SO-8 |
DUAL P |
P |
3V DRIVE |
-12 |
24.0 |
-4.5 |
-7.8 |
-6.2 |
62.5 |
2.0 |
| IRF7328 |
SO-8 |
DUAL P |
P |
LOGIC |
-30 |
21.0 |
-10 |
-8.0 |
-6.4 |
62.5 |
2.0 |
| IRF7329 |
SO-8 |
DUAL P |
P |
1.8V DRIVE |
-12 |
170.0 |
-4.5 |
-9.2 |
-7.4 |
62.5 |
2.0 |
| IRF7342 |
SO-8 |
DUAL P |
P |
LOGIC |
-55 |
105.0 |
-10 |
-3.4 |
-2.7 |
62.5 |
2.0 |
| IRF7504 |
Micro 8 |
DUAL P |
P |
3V DRIVE |
-20 |
270.0 |
-2.7 |
-1.7 |
-1.4 |
100 |
1.25 |
| IRF7506 |
Micro 8 |
DUAL P |
P |
LOGIC |
-30 |
270.0 |
-4.5 |
-1.7 |
-1.4 |
100 |
1.25 |
| IRF7555 |
Micro 8 |
DUAL P |
P |
LOGIC |
-20 |
55.0 |
-4.5 |
-4.3 |
|
100 |
1.25 |
| IRF7750 |
TSSOP-8 |
DUAL P |
P |
3V DRIVE |
-20 |
30.0 |
-4.5 |
+/-4.7 |
-3.8 |
125 |
1.0 |
| IRF7751 |
TSSOP-8 |
DUAL P |
P |
LOGIC |
-30 |
35.0 |
-10 |
-4.5 |
-3.6 |
125 |
1.0 |
| IRF7754 |
TSSOP-8 |
DUAL P |
P |
3V DRIVE |
-12 |
25.0 |
-4.5 |
-5.5 |
-4.4 |
125 |
1 |
| IRF7755 |
TSSOP-8 |
DUAL P |
P |
LOGIC |
-20 |
3700.0 |
-4.5 |
-3.9 |
-3.1 |
125 |
1 |
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
BVDSS |
Rds(on) /P-channel (mOhms) max |
@ Vgs |
ID @ 25C /P-channel (A) |
Id @ 70C P-Channel |
Rth(JC) |
Мощность рассеяния (W) |
| IRF7756 |
TSSOP-8 |
DUAL P |
P |
1.8V DRIVE |
-12 |
58.0 |
-2.7 |
-3.4 |
|
125 |
1.0 |
| IRF9953 |
SO-8 |
DUAL P |
P |
LOGIC |
-30 |
250.0 |
-10 |
-2.3 |
-1.8 |
62.5 |
2.0 |
- Polarity - полярность
- Gate Drive - разновидность схемы управления затвором
- BVDSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) max (Static Drain-to-Source On-Resistance) -максимальное сопротивление по постоянному току во включенном состоянии между стоком и истоком
- @Vgs (Gate-to-Source Voltage) - нормированное напряжение затвор-исток, при котором происходит открытие канала транзистора
- ID (Continuous Drain Current) - продолжительный ток стока
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
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