Двойные N- и P-канальные силовые полевые МОП транзисторы технологии HEXFET®
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
BVDSS |
Rds(on) /N-channel (mOhms) max |
Rds(on) /P-channel (mOhms) max |
@ Vgs |
ID @ 25C /N-channel (A) |
ID @ 25C /P-channel (A) |
Id @ 70C N-Channel |
Id @ 70C P-Channel |
Rth(JC) |
Мощность рассеяния (W) |
 IRF5851 |
Micro 6 |
1 N / 1 P |
DUAL |
3V DRIVE |
20 |
90.0 |
135.0 |
4.5 |
2.7 |
-2.2 |
2.2 |
-1.7 |
130 |
0.96 |
| IRF7105 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
25 |
109.0 |
250.0 |
4.5 |
3.5 |
-2.3 |
2.8 |
-1.8 |
62.5 |
2.0 |
| IRF7307 |
SO-8 |
1 N / 1 P |
DUAL |
3V DRIVE |
20 |
50.0 |
90.0 |
4.5 |
4.3 |
-3.6 |
3.4 |
-2.9 |
90 |
1.4 |
| IRF7309 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
50.0 |
100.0 |
4.5 |
4.9 |
-3.6 |
3.9 |
-2.9 |
62.5 |
2.0 |
| IRF7317 |
SO-8 |
1 N / 1 P |
DUAL |
3V DRIVE |
20 |
46.0 |
98.0 |
2.7 |
6.6 |
-5.3 |
5.3 |
-4.3 |
62.5 |
2.0 |
| IRF7319 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
46.0 |
98.0 |
4.5 |
6.5 |
-4.9 |
5.2 |
-3.9 |
62.5 |
2.0 |
| IRF7338 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
12 |
34.0 |
150.0 |
4.5 |
6.3 |
-3.0 |
5.2 |
-2.5 |
62.5 |
2.0 |
| IRF7343 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
55 |
43.0 |
56.0 |
10 |
4.7 |
-3.4 |
3.8 |
-2.7 |
62.5 |
2 |
| IRF7350 |
SO-8 |
1 N / 1 P |
DUAL |
STANDARD |
100 |
210.0 |
420.0 |
10 |
2.1 |
-1.5 |
1.3 |
-1 |
62.5 |
2.0 |
| IRF7379 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
38.0 |
70.0 |
10 |
5.8 |
-4.3 |
4.6 |
-3.4 |
50 |
2.5 |
| IRF7389 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
29.0 |
58.0 |
4.5 |
7.3 |
-5.3 |
5.9 |
-4.2 |
50 |
2.5 |
| IRF7507 |
Micro 8 |
1 N / 1 P |
DUAL |
3V DRIVE |
20 |
135.0 |
270.0 |
2.7 |
2.4 |
-1.7 |
1.9 |
-1.4 |
100 |
1.25 |
| IRF7509 |
Micro 8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
135.0 |
270.0 |
4.5 |
2.4 |
-1.7 |
1.9 |
-1.4 |
100 |
1.25 |
| IRF9952 |
SO-8 |
1 N / 1 P |
DUAL |
LOGIC |
30 |
100.0 |
250.0 |
10 |
3.5 |
-2.3 |
2.8 |
-1.8 |
62.5 |
2.0 |
- Polarity - полярность
- Gate Drive - разновидность схемы управления затвором
- BVDSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) max (Static Drain-to-Source On-Resistance) -максимальное сопротивление по постоянному току во включенном состоянии между стоком и истоком
- @Vgs (Gate-to-Source Voltage) - нормированное напряжение затвор-исток, при котором происходит открытие канала транзистора
- ID (Continuous Drain Current) - продолжительный ток стока
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
|
